Izdelki za jeklena jekla (41)

We have got 3 pulling machins for monocrystalline Silicon by the Czochralski method with maximum diameter Ф165 mm. Production capacity – 1500 kg/month. Materials and consumables from proven producers in the industry are used in our production, which guarantees the production of crystals with required purity and properties. Our extensive production experience, in a combination with application of state-of-the-art technologies and practices, allows us to produce crystals of high purity and quality meeting the requirements of our customers.

A squaring machine with two blades for outside cutting is used for this operation. Capacity – 2000 kg/month. It produces rectangular ingots with a maximum diagonal of 200 mm.

Wafers with maximum dimensions 200x200 mm are being lapped. Capacity – 1000 kg/month. Surface roughness – ˂ Ra 0.1

Monocrystalline Silicon for microelectronics Conductivity type:Р Type (Boron) Orientation:100 and 111 ±2° Carbon content:Less than 2.5х1016 at.cm3 Oxygen content:Less than 1х1018 at.cm3 Resistance:0,05 ÷ 45 ± 20% Ω/сm Shape:Grinded cylinder Diameter:76,2 mm, 100 mm, 125 mm, 150 mm

After having pulled the crystal out, it is placed in the sawing machine, where the initial and the end cone are being cut out. Thereafter, the cylindrical part is cut-to-length, as requested. Diamond discs for peripheral sawing are used for cutting.

Depending on the customers’ orders, the crystals are being ground on the outside diameter of a diamond peripheral sawing disk. We have got three centre grinders with a total monthly capacity 2000 kg. Maximum ground diameter – Ф200 mm. Accuracy 0.03 mm. Surface roughness - Ra ˂ 0.25.

We produce targets, both single pieces and complete sets Resistance – as per customer’s specifications Conductivity type:– P or N Shape:round or rectangular Maximum diameter:Ф155 ± 0,1 mm Maximum diagonal of rectangular targets:160 ± 0,2 mm Maximum thickness:100 mm ± 0,025 mm

Full square 100х100 from Ф 135 mmPseudo-square 100х100 from Ф125 mm Pseudo-square 125х125 from Ф150 mm Conductivity type:Р Type (Boron) Orientation:100 ±2° Carbon content:Less than 5х1016 at. Cm3 Oxygen content:Less than 1х1018 at.cm3 Resistance:0,5 ÷ 3 Ω/сm

Wafer thickness(μm) standard >350 >400 >440 >500 minimum 300 350 380 420 Through-the-thickness accuracy(μm) standard ±15 ±20 ±20 ±20 Thickness deviation TTV (μm) maximum 10 15 20 25 standard <7 <10 <10 <12 ИWafer warp (μm) maximum 30 35 40 45 standard <15 <15 <20 <25

The company is technologically capable of slicing of thin wafers from optical glass and semi-precious stones. Wafer thickness:0,05mm – 50mm Diagonal:140мм Diameter:150мм Slice thickness (losses):0,04mm

Resistance for mirrors Outside diameter:up to Ф155 mm Conductivity type:– P or N Orientation:-100, 111 Transmittance:- >52% N type:10 ÷ 30 Ω/сm Р type:15 ÷ 40 Ω/сm N and Р type:0,005 ÷ 0,2 Ω/cm Ingot Diameter tolerance:±0,03 mm Blank Thickness tolerance:±0,025 mm